shantou huashan electronic devices co.,ltd . silicon controlled rectifier features * repetitive peak off-state voltage : 600v * r.m.s on-state current(i t(rms) =1.5a) * low on-state voltage (1.2v(typ.)@ i tm ) general description sensitive triggering scr is suitable for the application where gate current limited such as small motor control, gate driver for large scr, sensing and detecting circuits. absolute maximum ratings t a =25 unless otherwise specified t stg storage temperature ------------------------------------------------------ - 40~125 t j operating junction temperature ---------------------------------------------- - 40~125 v drm repetitive peak off-state voltage ---------- ------------------- ---------------------- ----------------- 600v i t rms r.m.s on-state current 180o conduction angles ------------------------------------------1.5a i t(av) average on-state current (half sine wave : t c = 45 c) ----------------------------------------1.0a i tsm surge on-state current (1/2 cycle, 60hz, sine wave, non-repeti tive) ------------------------- 15a i 2 t circuit fusing consid erations(t = 8.3ms) ----------------------------------------------------------- 0.9a 2 s p gm forward peak gate power dissipation (t a =25 ) --------------------------------------------------- 2w p g(av) forward average gate power dissipation (t a =25 ,t=8.3ms) ---------------------------------0.1w i fgm forward peak gate current -------------------------------------------------------------------------------- 1a v rgm reverse peak gate voltage ------------------------------------------------------------------------------- 5v HCR2C60
shantou huashan electronic devices co.,ltd . electrical characteristics t a =25 unless otherwise specified symbol items min. typ. max. unit conditions i drm repetitive peak off-state current 10 200 ua v ak =v drm t a =25 t a =125 v tm peak on-state voltage (1) 1.2 1.7 v i tm =3a,peak i gt gate trigger current 2 200 500 ua v ak =6v(dc), r l =100 ohm t a =25 t a = -40 v gt gate trigger voltage (2) 0.8 1.2 v v ak =7v(dc), r l =100 ohm t a =25 t a = -40 v gd non-trigger gate voltage 0.2 v v ak =12v, r l =100 ohm t a =125 i h holding current 2.0 5.0 10 ma i t=100ma, gate open, t a =25 t a = -40 rth(j-c) thermal resistance 50 /w junction to case rth(j-a) thermal resistance 160 /w junction to ambient dv/dt critical rate of rise off-state voltage 200 v/s v d =v drm 67% exponential waveform rjk=1kohm tj=125 1. forward current applied for 1 ms maximum duration,duty cycle 1%. 2. r gk current is not included in measurement. performance curves figure 1 ? gate characteristics figure 2 ? maximum casetemperture gate current (ma) average on-state current (ma) HCR2C60 gate voltage (v) max. allowable case temperture (c)
shantou huashan electronic devices co.,ltd . figure 3-typical forward voltage(v) figure 4-thermal response on-state voltage (v) time (sec) figure 5-typical gate trigger voltage vs figure 6-typical gate trigger current vs junction temperature junction temperature junction temperature (c) junction temperature (c) figure 7-typical holding current figure 8-power dissipation junction temperature (c) average on-state current (a) HCR2C60 on-state current(a) transient thermal im p erdance ( c ) max. average power dissipation (w) holding current (ma)
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